IndiumV3, Russie, Analysis, bibRecord, 000466

MCT heteroepitaxial 4 × 288 FPA

Identifieur interne : 000466 ( Russie/Analysis ); précédent : 000465; suivant : 000467

MCT heteroepitaxial 4 × 288 FPA

Auteurs : RBID : Pascal:04-0033021

Descripteurs français

Pascal (Inist)
- Hétéroépitaxie, Epitaxie jet moléculaire, Mercure Cadmium Tellurure, Composé ternaire, Réseau linéaire, Rayonnement IR lointain, Dispositif CCD, Procédé fabrication, Imagerie IR, Etude expérimentale, HgCdTe, Cd Hg Te, CdZnTe, Cd Te Zn, 8115J, 0757K.

English descriptors

KwdEn :
- Charge coupled devices, Experimental study, Far infrared radiation, Heteroepitaxy, Infrared imaging, Linear grating, Manufacturing processes, Mercury Cadmium Tellurides, Molecular beam epitaxy, Ternary compounds.

Abstract

4 x 288 heteroepitaxial mercury-cadmium telluride (MCT) linear arrays for long wavelength infrared (LWIR) applications with 28 x 25 micron diodes and charge coupled devices (CCD) silicon readouts were designed, manufactured and tested. MCT heteroepitaxial layers were grown by MBE technology on (013) GaAs substrates with CdZnTe buffer layers and had cutoff wavelength λ_co 11.8 ± 0.15 μm at T = 78 K. To decrease the surface influence of carrier recombination processes the compositionally dependent layers with increase of Cd content both toward the surface and HgCdTe/CdZnTe boundary interface were grown. Silicon readouts with CCD multiplexers with input direct injection circuits were designed, manufactured and tested. The testing procedure, to qualify readout integrated circuits on wafer level at T = 300 K, was worked out. The silicon readouts for 4 x 288 arrays, with skimming and partitioning functions included were manufactured by n-channel MOS technology with buried or surface channel CCD register. The HgCdTe arrays and Si CCD readouts were hybridized by cold welding indium bumps technology. With skimming mode used for 4 x 288 MCT n-p-junctions, the detectivity for several tested 4 x 288 arrays was within D*_λ ≅ 9 × 10¹⁰-1.8 × 10¹¹ cm Hz^1/2/W for background temperature T_b = 295 K.

Links toward previous steps (curation, corpus...)

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Links to Exploration step

Pascal:04-0033021

Le document en format XML

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<idno type="RBID">Pascal:04-0033021</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge coupled devices</term>
<term>Experimental study</term>
<term>Far infrared radiation</term>
<term>Heteroepitaxy</term>
<term>Infrared imaging</term>
<term>Linear grating</term>
<term>Manufacturing processes</term>
<term>Mercury Cadmium Tellurides</term>
<term>Molecular beam epitaxy</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Hétéroépitaxie</term>
<term>Epitaxie jet moléculaire</term>
<term>Mercure Cadmium Tellurure</term>
<term>Composé ternaire</term>
<term>Réseau linéaire</term>
<term>Rayonnement IR lointain</term>
<term>Dispositif CCD</term>
<term>Procédé fabrication</term>
<term>Imagerie IR</term>
<term>Etude expérimentale</term>
<term>HgCdTe</term>
<term>Cd Hg Te</term>
<term>CdZnTe</term>
<term>Cd Te Zn</term>
<term>8115J</term>
<term>0757K</term>
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<front><div type="abstract" xml:lang="en">4 x 288 heteroepitaxial mercury-cadmium telluride (MCT) linear arrays for long wavelength infrared (LWIR) applications with 28 x 25 micron diodes and charge coupled devices (CCD) silicon readouts were designed, manufactured and tested. MCT heteroepitaxial layers were grown by MBE technology on (013) GaAs substrates with CdZnTe buffer layers and had cutoff wavelength λ<sub>co</sub>
  11.8 ± 0.15 μm at T = 78 K. To decrease the surface influence of carrier recombination processes the compositionally dependent layers with increase of Cd content both toward the surface and HgCdTe/CdZnTe boundary interface were grown. Silicon readouts with CCD multiplexers with input direct injection circuits were designed, manufactured and tested. The testing procedure, to qualify readout integrated circuits on wafer level at T = 300 K, was worked out. The silicon readouts for 4 x 288 arrays, with skimming and partitioning functions included were manufactured by n-channel MOS technology with buried or surface channel CCD register. The HgCdTe arrays and Si CCD readouts were hybridized by cold welding indium bumps technology. With skimming mode used for 4 x 288 MCT n-p-junctions, the detectivity for several tested 4 x 288 arrays was within D*<sub>λ</sub>
 ≅ 9 × 10<sup>10</sup>
-1.8 × 10<sup>11</sup>
 cm Hz<sup>1/2</sup>
/W for background temperature T<sub>b</sub>
 = 295 K.</div>
</front>
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<fA11 i1="01" i2="1"><s1>VASILYEV (V. V.)</s1>
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<fC01 i1="01" l="ENG"><s0>4 x 288 heteroepitaxial mercury-cadmium telluride (MCT) linear arrays for long wavelength infrared (LWIR) applications with 28 x 25 micron diodes and charge coupled devices (CCD) silicon readouts were designed, manufactured and tested. MCT heteroepitaxial layers were grown by MBE technology on (013) GaAs substrates with CdZnTe buffer layers and had cutoff wavelength λ<sub>co</sub>
  11.8 ± 0.15 μm at T = 78 K. To decrease the surface influence of carrier recombination processes the compositionally dependent layers with increase of Cd content both toward the surface and HgCdTe/CdZnTe boundary interface were grown. Silicon readouts with CCD multiplexers with input direct injection circuits were designed, manufactured and tested. The testing procedure, to qualify readout integrated circuits on wafer level at T = 300 K, was worked out. The silicon readouts for 4 x 288 arrays, with skimming and partitioning functions included were manufactured by n-channel MOS technology with buried or surface channel CCD register. The HgCdTe arrays and Si CCD readouts were hybridized by cold welding indium bumps technology. With skimming mode used for 4 x 288 MCT n-p-junctions, the detectivity for several tested 4 x 288 arrays was within D*<sub>λ</sub>
 ≅ 9 × 10<sup>10</sup>
-1.8 × 10<sup>11</sup>
 cm Hz<sup>1/2</sup>
/W for background temperature T<sub>b</sub>
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<s5>09</s5>
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<s5>09</s5>
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<fN21><s1>019</s1>
</fN21>
<fN82><s1>PSI</s1>
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MCT heteroepitaxial 4 × 288 FPA

MCT heteroepitaxial 4 × 288 FPA

Descripteurs français

English descriptors

Abstract

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